GaNext is committed to the research and development, design and production of high-end Gallium nitride (GaN) power devices. The application scenarios of the third-generation GaN power semiconductors are being explored from low-power to medium-high-power.
Zhuhai GaNext Technology (Chinese: 镓未来), maker and developer of high-end Gallium nitride (GaN) power devices, completed a Series A+ round of financing worth hundreds of millions of CNY today, news portal 36kr.com reported.
The round was invested by Shunwei Capital, GL Ventures, Yingfu Taike Investment. Shenzhen Qi Neng Investment acted as an exclusive financial advisor. GaNext has bagged over CNY 200 million (USD 29.76 million) since its establishment in 2021.
The funds from this round will mainly be used on the development of new products, application solutions for GaN power chips, and construction of supply chain.
GaN is one of the core materials of the third-generation semiconductor with the characteristics of higher power density, smaller size, and lower power consumption. GaNext has achieved prototype development and testing of 800W to 3600W server power supplies and computing power supplies, and related GaN products have been mass-produced.
Wu Yifeng, founder of GaNext, said that the company has the technical strength to produce high-power chips of more than 6 kilowatts and to achieve mass-production. It also starts building a new generation of medium and high-power technology platforms.
It is expected that products in the new technology platforms can be mass-produced within two or three years, which is not only leading in China, also leading in the world, Wu added.
GaNext has developed and mass-produced GaN switching devices suitable for 30-120W power adapters in 2021. Orders on mobile phone and notebook fast charging have exceeded millions of units, and the annual revenue exceeded CNY 10 million in the same year.